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A Product Line of
Diodes Incorporated
ZXMN6A11Z
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
60
-
-
-
-
-
-
1.0
100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 60V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Note 7 & 9)
Diodes Forward Voltage (Note 7)
V GS(th)
R DS (ON)
g FS
V SD
1
-
-
-
-
-
-
4.9
0.85
2.2
120
180
-
0.95
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 2.5A
V GS = 4.5V, I D = 2A
V DS = 15V, I D = 2.5A
T J = 25 ° C, I S = 2.8A, V GS = 10V
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 8 & 9)
Output Capacitance (Note 8 & 9)
Reverse Transfer Capacitance (Note 8 & 9)
Gate Charge (Note 8 & 9)
Total Gate Charge (Note 8 & 9)
Gate-Source Charge (Note 8 & 9)
Gate-Drain Charge (Note 8 & 9)
Reverse Recovery Time (Note 9)
Reverse Recovery Charge (Note 9)
Turn-On Delay Time (Note 8 & 9)
Turn-On Rise Time (Note 8 & 9)
Turn-Off Delay Time (Note 8 & 9)
Turn-Off Fall Time (Note 8 & 9)
C iss
C oss
C rss
Q g
Q g
Q gs
Q gd
t rr
Q rr
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
330
35.2
17.1
3
5.7
1.25
0.86
21.5
20.5
1.95
3.5
8.2
4.6
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
ns
nC
ns
ns
ns
ns
V DS = 40V, V GS = 0V,
f = 1.0MHz
V GS = 5V, V DS = 15V, I D = 2.5A
V GS = 10V, V DS = 15V,
I D = 2.5A
T J = 25 ° C, I S = 2.5A,
di/dt = 100A/ μ s
V GS = 10V, V DD = 30V,
R G = 6 ? , I D = 2.5A
Notes:
7. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%.
8. Switching characteristics are independent of operating junction temperature.
9. For design aid only, not subject to production testing.
]
ZXMN6A11Z
Document number DS33557 Rev. 4 - 2
3 of 7
www.diodes.com
December 2011
? Diodes Incorporated
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